? semiconductor components industries, llc, 2012 september, 2012 ? rev. 14 1 publication order number: bas19lt1/d bas19l, nsvbas19l, bas20l, sbas20l, bas21l, sbas21l, bas21dw5, sbas21dw5 high voltage switching diode features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant ? s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable maximum ratings rating symbol value unit continuous reverse voltage bas19, nsvbas19 bas20, sbas20 bas21, sbas21 v r 120 200 250 vdc repetitive peak reverse voltage bas19, nsvbas19 bas20, sbas20 bas21, sbas21 v rrm 120 200 250 vdc continuous forward current i f 200 madc peak forward surge current i fm(surge) 625 madc junction and storage temperature range t j , t stg ? 55 to +150 c power dissipation (note 1) p d 385 mw electrostatic discharge esd hm < 500 mm < 400 v v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. mounted on fr ? 5 board = 1.0 x 0.75 x 0.062 in. high voltage switching diode 5 cathode 1 anode marking diagrams http://onsemi.com 3 cathode 1 anode 4 cathode 3 anode sot ? 23 (to ? 236) case 318 style 8 sc ? 88a (sot ? 353) case 419a sot ? 23 sc ? 88a ordering information see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 2 3 1 jx m x = p, r, or s p = bas19l, nsvbas19l r = bas20l, sbas20l s = bas21l, sbas21l or bas21dw5, sbas21dw5 m = date code = pb ? free package 2 3 jx m 1 3 3 2 1 4 5 *date code orientation and/or overbar may vary depending upon the manufacturing location. (note: microdot may be in either location)
bas19l, nsvbas19l, bas20l, sbas20l, bas21l, sbas21l, bas21dw5, sbas21dw5 http://onsemi.com 2 thermal characteristics (sot ? 23) characteristic symbol max unit total device dissipation fr ? 5 board (note 2) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction ? to ? ambient (sot ? 23) r ja 556 c/w total device dissipation alumina substrate (note 3) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction ? to ? ambient r ja 417 c/w junction and storage temperature range t j , t stg ? 55 to +150 c thermal characteristics (sc ? 88a) characteristic symbol max unit power dissipation (note 4) p d 385 mw thermal resistance ? junction ? to ? ambient derate above 25 c r ja 328 3.0 c/w mw/ c maximum junction temperature t jmax 150 c operating junction and storage temperature range t j , t stg ? 55 to +150 c 2. fr ? 5 = 1.0 0.75 0.062 in. 3. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. mounted on fr ? 5 board = 1.0 x 0.75 x 0.062 in. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit reverse voltage leakage current (v r = 100 vdc) bas19, nsvbas19 (v r = 150 vdc) bas20, sbas20 (v r = 200 vdc) bas21, sbas21 (v r = 100 vdc, t j = 150 c) bas19 (v r = 150 vdc, t j = 150 c) bas20, sbas20 (v r = 200 vdc, t j = 150 c) bas21, sbas21 i r ? ? ? ? ? ? 0.1 0.1 0.1 100 100 100 adc reverse breakdown voltage (i br = 100 adc) bas19, nsvbas19 (i br = 100 adc) bas20, sbas20 (i br = 100 adc) bas21, sbas21 v (br) 120 200 250 ? ? ? vdc forward voltage (i f = 100 madc) (i f = 200 madc) v f ? ? 1.0 1.25 vdc diode capacitance (v r = 0, f = 1.0 mhz) c d ? 5.0 pf reverse recovery time (i f = i r = 30 madc, i r(rec) = 3.0 madc, r l = 100) t rr ? 50 ns
bas19l, nsvbas19l, bas20l, sbas20l, bas21l, sbas21l, bas21dw5, sbas21dw5 http://onsemi.com 3 notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 30 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 30 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 3.0 ma output pulse (i f = i r = 30 ma; measured at i r(rec) = 3.0 ma) i f input signal figure 1. recovery time equivalent test circuit v f , forward voltage (v) 0.1 10 20 v r , reverse voltage (v) 1.0 0.1 0.01 0.001 50 80 110 140 170 1.6 0 v r , reverse voltage (v) 1.4 1.0 0.6 0.4 c d , diode capacitance (pf) 246 8 i f , forward current (ma) figure 2. v f vs. i f figure 3. i r vs. v r figure 4. capacitance i r , reverse current ( a) 1.0 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 85 c 55 c 150 c 125 c 25 c -55 c 200 230 0.8 1.2 1357 cap -40 c 260 150 c 125 c 85 c 55 c 25 c
bas19l, nsvbas19l, bas20l, sbas20l, bas21l, sbas21l, bas21dw5, sbas21dw5 http://onsemi.com 4 ordering information device package shipping ? bas19lt1g sot ? 23 (pb ? free) 3000 / tape & reel bas19lt3g sot ? 23 (pb ? free) 10000 / tape & reel NSVBAS19LT1G* sot ? 23 (pb ? free) 3000 / tape & reel bas20lt1g sot ? 23 (pb ? free) 3000 / tape & reel bas20lt3g sot ? 23 (pb ? free) 10000 / tape & reel sbas20lt1g* sot ? 23 (pb ? free) 3000 / tape & reel bas21lt1g sot ? 23 (pb ? free) 3000 / tape & reel sbas21lt1g* sot ? 23 (pb ? free) 3000 / tape & reel bas21lt3g sot ? 23 (pb ? free) 10000 / tape & reel sbas21lt3g* sot ? 23 (pb ? free) 10000 / tape & reel bas21dw5t1g sc ? 88a (pb ? free) 3000 / tape & reel sbas21dw5t1g* sc ? 88a (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefixes for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable.
bas19l, nsvbas19l, bas20l, sbas20l, bas21l, sbas21l, bas21dw5, sbas21dw5 http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 8: pin 1. anode 2. no connection 3. cathode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
bas19l, nsvbas19l, bas20l, sbas20l, bas21l, sbas21l, bas21dw5, sbas21dw5 http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a ? 01 obsolete. new standard 419a ? 02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ? b ? sc ? 88a (sc ? 70 ? 5/sot ? 353) case 419a ? 02 issue k mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bas19lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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